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Vacuum channel transistors are potential candidates for low-loss and high-speed electronic devices beyond complementary metal-oxide-semiconductors (CMOS). When the nanoscale transport distance is smaller than the mean free path (MFP) in atmospheric pressure, a transistor can work in air owing to the immunity of carrier collision. The nature of a vacuum channel allows devices to function in a high-temperature radiation environment. This research intended to investigate gate location in a vertical vacuum channel transistor. The influence of scattering under different ambient pressure levels was evaluated using a transport distance of about 60 nm, around the range of MFP in air. The finite element model suggests that gate electrodes should be near emitters in vertical vacuum channel transistors because the electrodes exhibit high-drive currents and low-subthreshold swings. The particle trajectory model indicates that collected electron flow (electric current) performs like a typical metal oxide semiconductor field effect-transistor (MOSFET), and that gate voltage plays a role in enhancing emission electrons. The results of the measurement on vertical diodes show that current and voltage under reduced pressure and filled with CO 2  are different from those under atmospheric pressure. This result implies that this design can be used for gas and pressure sensing.

Vertical Field Emission Air-Channel Diodes and Transistors