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In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage ( V  ON ) maintaining high on-state current ( I  ON ) and low subthreshold swing ( SS ) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower V  ON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher I  ON and 7 mV/dec smaller average SS with the same V  ON as that for L-shaped TFET.

F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application