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In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (V BK ) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode⁻cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (V T ) of 0.53 V and a specific on-resistance (R ON,sp ) of 0.32 mΩ·cm², which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a V BK of 1252 V, which was enhanced almost six times compared to the GET SBD with a V BK of 213 V.

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer