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In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current ( I  ON ) and low-level OFF-state current ( I  OFF ); ambipolar current ( I  AMB ). In detail, its I  ON is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The I  AMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group's results.

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain