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In this research, a study to selectively recover Si from end-of-life photovoltaic cells by using acid solutions (HNO3 and HCl) and the cavitation effect of an ultrasonic cleaner was carried out. To selectively recover Si from an end-of-life photovoltaic cell, after a leaching process was conducted by using an acid solution, the photovoltaic cell that had completed the reaction was cleaned with distilled water and dried in a drying oven (100 °C) for 24 h. The experiment was conducted with acid solution concentration, reaction temperature, reaction time, and ultrasonic intensity as variables. In the results of the experiment, the optimal process was determined to be a concentration of 3M, a reaction temperature of 60 °C, a reaction time of 90 min, and an ultrasonic intensity of 150 W when using the HNO3 solution and a concentration of 3M, a reaction temperature of 60 °C, a reaction time of 120 min, and an ultrasonic intensity of 150 W when using the HCl solution. At this time, Si purity was 99.78% for HNO3 and 99.85% for HCl and the Si recovery rate was 98.9% for HNO3 and 99.24% for HCl.

A Study on the Wet Process Conditions That Affect the Selective Recovery of Si from Photovoltaic Cells by Using the Cavitation Effect