English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (&lt;100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.

Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode