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In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN x ) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiN x  gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiN x  layer and the amount of oxygen vacancy near the interface between SiN x  and InGaZnO layer was suppressed via pre-implanted oxygen on SiN x  gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap ( D it  ) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm 2 /V·s, threshold voltage ( V th  ) of −0.10 V,  I on  / I off   over 10 8 , SS of 97 mV/decade, and  V th   shift of −0.37 V after NBIS. The plasma oxidation on SiN x  gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric