English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

This paper presents a novel TaN-Al₂O₃-HfSiO x -SiO₂-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO x /SiO₂ interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide-charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 10³ P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM.

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory