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We grew epitaxial layers on 4 H -silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3 C -inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3 C inclusions were generated both at the interface between the substrate and epitaxial layer, and during epitaxial growth. 3 C -SiC nucleation is proposed to trigger the formation of 3 C inclusions. We suppressed 3 C -inclusion formation by performing deep in situ etching and using a high C/Si ratio, which removed substrate surface damage and improved the 4 H -SiC stability, respectively. The as-grown epitaxial layers had rough surfaces because of step bunching due to the deep in situ etching, but the rough surface became smooth after chemical mechanical polishing treatment. These techniques allow the growth of epitaxial layers with 1° off-angles for a wide range of doping concentrations.

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle