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We present a brief review of experimental and theoretical papers on studiesof electron transport and magnetic properties in manganese-based compoundsMn$_2$YZ and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt,etc.). It has been shown that in the electronic subsystem of Mn$_2$YZcompounds, the states of a half-metallic ferromagnet and a spin gaplesssemiconductor can arise with the realization of various magnetic states, suchas a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet.Binary compounds Mn$_3$Z have the properties of a half-metallic ferromagnet anda topological semimetal with a large anomalous Hall effect, spin Hall effect,spin Nernst effect, and thermal Hall effect. Their magnetic states are alsovery diverse: from a ferrimagnet and an antiferromagnet to a compensatedferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnetwith a kagome-type lattice. It has been demonstrated that the electronic andmagnetic properties of such materials are very sensitive to external influences(temperature, magnetic field, external pressure), as well as the processingmethod (cast, rapidly quenched, nanostructured, etc.). Knowledge of theregularities in the behavior of the electronic and magnetic characteristics ofMn$_2$YAl and Mn$_3$Z compounds can be used for applications in micro- andnanoelectronics and spintronics.

materials

Magnetic States and Electronic Properties of Manganese-Based  Intermetallic Compounds Mn$_2$YAl and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni; Z = Al,  Ge, Sn, Si, Pt)