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Here, we compare the material quality of AlxIn1-xN layers deposited on Siwith different crystallographic orientations, (100) and (111), viaradio-frequency (RF) sputtering. To modulate their Al content, the Al RF powerwas varied from 0 to 225 W, whereas the In RF power and deposition temperaturewere fixed at 30 W and 300oC, respectively. X-ray diffraction measurementsreveal a c-axis-oriented wurtzite structure with no phase separation regardlessof the Al content (x = 0-0.50), which increases with the Al power supply. Thesurface morphology of the AlxIn1-xN layers improves with increasing Al contentand it is similar for samples grown on both Si substrates (the root-mean-squareroughness decreases from 12 nm to 2.5 nm). Furthermore, from TEM images wenotice a similar grain-like columnar morphology and defect density on samplesdeposited on both Si substrates under the same conditions. Simultaneously grownAlxIn1-xN-on-sapphire samples point to a residual n-type carrier concentrationin the 1020-1021 cm-3 range. The optical band gap energy of these layersevolves from 1.75 eV to 2.56 eV with increasing Al content, consistent with theblue shift of their low-temperature photoluminescence. In general, the materialquality of the AlxIn1-xN films on Si is similar for both crystallographicorientations. Nonetheless, samples deposited on sapphire show an improvedstructural and morphological characteristic likely due to the lower differencein lattice constants between the nitride and the sapphire substrate.

Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering