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La 2/3 Cu 3 Ti 4 O 12 ceramics were prepared by the same method of solid-state reaction as CaCu 3 Ti 4 O 12 ceramics. The structure and dielectric responses for La 2/3 Cu 3 Ti 4 O 12 and CaCu 3 Ti 4 O 12 ceramics were systematically investigated by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy, and impedance analyzer. Compared with CaCu 3 Ti 4 O 12 ceramics, La 2/3 Cu 3 Ti 4 O 12 ceramics with higher density and refined grain exhibit a high dielectric constant (ε' ~ 10 4 ) and two dielectric relaxations in a wide temperature range. The dielectric relaxation below 200 K with an activation energy of 0.087 eV in La 2/3 Cu 3 Ti 4 O 12 ceramics is due to the polyvalent state of Ti 3+ /Ti 4+ and Cu + /Cu 2+ , while the dielectric relaxation above 450 K with higher activation energy (0.596 eV) is due to grain boundary effects. These thermal activated dielectric relaxations with lower activation energy in La 2/3 Cu 3 Ti 4 O 12 ceramics both move to lower temperatures, which can be associated with the enhanced polyvalent structure in La 2/3 Cu 3 Ti 4 O 12 ceramics. Such high dielectric constant ceramics are also expected to be applied in capacitors and memory devices.

High Dielectric Constant and Dielectric Relaxations in La2/3Cu3Ti4O12 Ceramics