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Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga 2 O 3 ) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al 0.83 In 0.17 N/GaN/Al 0.18 Ga 0.82 N/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized Al 0.18 Ga 0.82 N/GaN channel 1 and band discontinued lattice-matched Al 0.83 In 0.17 N/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating Ga 2 O 3 gate oxide layer and the high-quality interface between the Ga 2 O 3 and GaN layers, low noise power density of 8.7 × 10 -14 Hz -1 and low Hooge's coefficient of 6.25 × 10 -6 of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.

materials

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array