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Friction anisotropy is one of the important friction behaviors for two-dimensional (2D) van der Waals (vdW) crystals. The effects of normal pressure and thickness on the interfacial friction anisotropy in few-layer graphene, h -BN, and MoSe 2 under constant normal force mode have been extensively investigated by first-principle calculations. The increase of normal pressure and layer number enhances the interfacial friction anisotropy for graphene and h -BN but weakens that for MoSe 2 . Such significant deviations in the interfacial friction anisotropy of few-layer graphene, h -BN and MoSe 2 can be mainly attributed to the opposite contributions of electron kinetic energies and electrostatic energies to the sliding energy barriers and different interlayer charge exchanges. Our results deepen the understanding of the influence of external loading and thickness on the friction properties of 2D vdW crystals.

Interfacial Friction Anisotropy in Few-Layer Van der Waals Crystals