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Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T ( λ ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy of characterization, of the average film thickness d¯ and the thickness non-uniformity ∆d over the illuminated area, increases, employing a simple dual transformation utilizing the product T ( λ ) x  s ( λ ), where T  sm ( λ ) is the smoothed spectrum of T ( λ ) and x  s ( λ ) is the substrate absorbance. Secondly, an approach is proposed for selecting an interval of wavelengths, so that using envelope points only from this interval provides the most accurate characterization of d¯ and ∆d, as this approach is applicable no matter whether the substrate is transparent or non-transparent. Thirdly, the refractive index n ( λ ) and the extinction coefficient k ( λ ) are computed, employing curve fitting by polynomials of the optimized degree of 1/λ, instead of by previously used either polynomial of the optimized degree of λ or a two-term exponential of λ. An algorithm is developed, applying these three means, and implemented, to characterize a-Si and As 98 Te 2 thin films. Record high accuracy within 0.1% is achieved in the computation of d¯ and n ( λ ) of these films.

materials

Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum