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A batch of Sn oxides was fabricated by pulse direct current reactive magnetron sputtering (pDC−RMS) using different Ar/O 2  flow ratios at 0.3 Pa; the influence of stoichiometry on the physical and electrochemical properties of the films was evaluated by the characterization of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray reflection (XRR), X-ray photoelectron spectroscopy (XPS) and more. The results were as follows. First, the film surface transitioned from a particle morphology (roughness of 50.0 nm) to a smooth state (roughness of 3.7 nm) when Ar/O 2  flow ratios changed from 30/0 to 23/7; second, all SnO x  films were in an amorphous state, some samples deposited with low O 2  flow ratios (≤2 sccm) still included metallic Sn grains. Therefore, the stoichiometry of SnO x  calculated by XPS spectra increased linearly from SnO 0.0.08  to SnO 1.71  as the O 2  flow ratios increased, and the oxidation degree was further calibrated by the average valence method and SnO 2  standard material. Finally, the electrochemical performance was confirmed to be improved with the increase in oxidation degree (x) in SnO x , and the SnO 1.71  film deposited with Ar/O 2  = 23/7 possessed the best cycle performance, reversible capacity of 396.1 mAh/g and a capacity retention ratio of 75.4% after 50 cycles at a constant current density of 44 μA/cm 2 .

Stoichiometry Dependence of Physical and Electrochemical Properties of the SnOx Film Anodes Deposited by Pulse DC Magnetron Sputtering