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In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga 2 O 3 ) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga 2 O 3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm 2 V -1 s -1 ). The gate leakage current is as low as 1.0 × 10 -11 A at V GS = 10 V by the depletion layer formed between n-Ga 2 O 3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O 3 -treated SITs exhibit higher (approximately 1.64 × 10 2 times) drain current (V DS = 12 V) and on/off ratio (4.32 × 10 5 ) than non-treated control devices.

materials

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter