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Electrical and carrier transport properties in In-Ga-Zn-O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. For the heterojunction IGZO channel, a high-In composition IGZO layer (IGZO-high-In) was deposited on a typical compositions IGZO layer (IGZO-111). From the optical properties and photoelectron yield spectroscopy measurements, the heterojunction channel was expected to have the type-II energy band diagram which possesses a conduction band offset (Δ E  c ) of ~0.4 eV. A depth profile of background charge density indicated that a steep Δ E  c is formed even in the amorphous IGZO heterojunction interface deposited by sputtering. A field effect mobility ( μ  FE ) of bottom gate structured IGZO TFTs with the heterojunction channel (hetero-IGZO TFTs) improved to ~20 cm 2 V -1 s -1 , although a channel/gate insulator interface was formed by an IGZO-111 ( μ  FE = ~12 cm 2 V -1 s -1 ). Device simulation analysis revealed that the improvement of μ  FE in the hetero-IGZO TFTs was originated by a quantum confinement effect for electrons at the heterojunction interface owing to a formation of steep Δ E  c . Thus, we believe that heterojunction IGZO channel is an effective method to improve electrical properties of the TFTs.

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors