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Ba 2 SiO 4-δ N 2/3δ :Eu 2+ (BSON:Eu 2+ ) materials with different N 3- contents were successfully prepared and characterized. Rietveld refinements showed that N 3- ions were partially substituted for the O 2- ions in the SiO 4 -tetrahedra because the bond lengths of Si‒(O,N) (average value = 1.689 Å) were slightly elongated compared with those of Si‒O (average value = 1.659 Å), which resulted in the minute compression of the Ba(2)‒O bond lengths from 2.832 to 2.810 Å. The average N 3- contents of BSON:Eu 2+ phosphors were determined from 100 nm to 2000 nm depth of grain using a secondary ion mass spectrometry (SIMS): 0.064 (synthesized using 100% α-Si 3 N 4 ), 0.035 (using 50% α-Si 3 N 4 and 50% SiO 2 ), and 0.000 (using 100% SiO 2 ). Infrared (IR) and X-ray photoelectron spectroscopy (XPS) measurements corroborated the Rietveld refinements: the new IR mode at 850 cm -1 (Si‒N stretching vibration) and the binding energy at 98.6 eV (Si-2p) due to the N 3- substitution. Furthermore, in UV-region, the absorbance of N 3- -substituted BSON:Eu 2+ (synthesized using 100% α-Si 3 N 4 ) phosphor was about two times higher than that of BSO:Eu 2+ (using 100% SiO 2 ). Owing to the N 3- substitution, surprisingly, the photoluminescence (PL) and LED-PL intensity of BSON:Eu 2+ (synthesized using 100% α-Si 3 N 4 ) was about 5.0 times as high as that of BSO:Eu 2+ (using 100% SiO 2 ). The compressive strain estimated by the Williamson-Hall (W-H) method, was slightly increased with the higher N 3- content in the host-lattice of Ba 2 SiO 4, which warranted that the N 3- ion plays an important role in the highly enhanced PL intensity of BSON:Eu 2+ phosphor. These phosphor materials could be a bridgehead for developing new phosphors and application in white NUV-LEDs field.

Highly Luminous Ba2SiO4−δN2/3δ:Eu2+ Phosphor for NUV-LEDs: Origin of PL-Enhancement by N3−-Substitution