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GaAs monolithic microwave integrated circuits (MMICs) with different back metallization systems (TiW/Au and Au/Ti/Au) exhibit different problems in the automatic Au-Sn eutectic bonding process, such as edge breakage or excessive voids. In this study, the formation mechanism of the edge breakage and excessive voids were investigated to prevent the damage of the MMICs in mass production scenarios. The microstructure and elemental distribution were studied using a scanning electron microscope and energy-dispersive spectroscopy. The void contents of the brazed region were measured with three-dimensional computed tomography. The top Au layer of the TiW/Au metallization partially dissolved in the melting An-Sn solder. Consequently, liquidus temperature of the solder increased, leading to isothermal solidification with the formation of ζ-Au 5 Sn in the scrubbing process, which was the reason for the edge breakage. The terminal Au film of the Au/Ti/Au metallization completely dissolved in the melting An-Sn solder. The metallurgical combination was achieved by the formation of the TiAu 4 intermetallic compound between the Au-Sn solder and the Ti layer. The wettability of Au-Sn solder on Ti layer should be improved to prevent the formation of the excessive voids.

Microstructure Characterization and Interfacial Reactions between Au-Sn Solder and Different Back Metallization Systems of GaAs MMICs