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In this work, we present the study of the atomic composition in amorphous Si X Ge Y :H Z films deposited by radio frequency (RF-13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGe:H alloys deposited by RF plasma discharge was conducted and we made a comparison with low-frequency plasma discharge studies. Solid contents of the main elements and contaminants were determined by SIMS technique. It was found that for low dilution rates from R H = 9 to 30, the germanium content in the solid phase strongly depends on the hydrogen dilution and varies from Y = 0.49 to 0.68. On the other hand, with a higher presence of hydrogen in the mixture, the germanium content does not change and remains close to the value of Y = 0.69. The coefficient of Ge preferential incorporation depended on R H and varied from P Ge = 0.8 to 4.3. Also, the termination of Si and Ge atoms with hydrogen was studied using FTIR spectroscopy. Preferential termination of Si atoms was observed in the films deposited with low R H &lt; 20, while preferential termination of Ge atoms was found in the films deposited with high R H &gt; 40. In the range of 20 &lt; R H &lt; 40, hydrogen created chemical bonds with both Si and Ge atoms without preference.

Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature