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Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, &lt;110&gt;-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl 4 ) and methane (CH 4 ) as precursors, along with nitrogen (N 2 ) as a dopant. We investigated the effect of the volume fraction of nitrogen ( ϕ  N2 ) on the preferred orientation, microstructure, electrical conductivity ( σ ), deposition rate ( R  dep ), and optical transmittance. The preference of 3C-SiC for the &lt;110&gt; orientation increased with increasing ϕ  N2 . The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕ  N2 , reaching a maximum value of 7.4 × 10 2 S/m at ϕ  N2 = 20%. R dep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕ  N2 , reaching 1437 μm/h at ϕ  N2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕ  N2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared &lt;111&gt;-oriented N-doped 3C-SiC, the high-speed preparation of &lt;110&gt;-oriented N-doped 3C-SiC bulks further broadens its application field.

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition