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Structural and photoluminescence studies were carried out on Eu-doped Y 2 O 3-x S x thin films grown by atomic layer deposition at 300 °C. (CH 3 Cp) 3 Y, H 2 O, and H 2 S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd) 3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd) 3 pulse with either a H 2 S or O 3 pulse. The Eu(thd) 3 /O 3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd) 3 /H 2 S pulse sequence resulted in emission below 500 nm.

Control of Eu Oxidation State in Y2O3−xSx:Eu Thin-Film Phosphors Prepared by Atomic Layer Deposition: A Structural and Photoluminescence Study