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The influence of oxygen-plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO 2 gate insulator was investigated. Oxygen-plasma treatment was performed on in situ SiN, before SiO 2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO 2 on in situ SiN with oxygen-plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO 2 formation by PECVD.

Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator