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Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta 2 O 5 ) as the gate dielectric. The morphology and dielectric properties of the anodized Ta 2 O 5 films with and without n -octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta 2 O 5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm 2 V -1 s -1 , threshold voltage -0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 10 3 . As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics.

One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics