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To improve the performance of amorphous InGaZnO x (a-IGZO) thin film transistors (TFTs), in this thesis, Cs + ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of a-IGZO film, with the effective introduction of Cs + ions into the surface of a-IGZO films, the transfer properties and stability of a-IGZO TFTs are greatly improved. Different parameters of Cs + ion concentrations were investigated in our work. When the Cs + ions concentration reached 2% mol/L, the optimized performance Cs-IGZO TFT was obtained, showing the carrier mobility of 18.7 cm 2 V -1 s -1 , the OFF current of 0.8 × 10 -10 A, and the threshold voltage of 0.2 V, accompanied by the threshold voltage shifts of 1.3 V under positive bias stress for 5000 s.

Optimizing the Properties of InGaZnOx Thin Film Transistors by Adjusting the Adsorbed Degree of Cs+ Ions