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This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In 0.35 Ga 0.65 As 0.095 Sb 0.905 in terms of growth parameters (V/III ratio, Sb₂/As₂ ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al 0.85 Ga 0.15 As 0.072 Sb 0.928 (sample A) and Al 0.5 Ga 0.5 As 0.043 Sb 0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of Al x Ga 1-x As y Sb 1-y in terms of lasing performance.

PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE