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Cadmium telluride (CdTe) films were deposited on glass substrates by direct current (DC) magnetron sputtering, and the effect of substrate-target distance ( D ts  ) on properties of the CdTe films was investigated by observations of X-ray diffraction (XRD) patterns, atomic force microscopy (AFM), UV-VIS spectra, optical microscopy, and the Hall-effect measurement system. XRD analysis indicated that all samples exhibited a preferred orientation along the (111) plane, corresponding to the zinc blende structure, and films prepared using D ts  of 4 cm demonstrated better crystallinity than the others. AFM studies revealed that surface morphologies of the CdTe films were strongly dependent on D ts  , and revealed a large average grain size of 35.25 nm and a high root mean square (RMS) roughness value of 9.66 nm for films fabricated using D ts  of 4 cm. UV-VIS spectra suggested the energy band gap ( Eg ) initially decreased from 1.5 to 1.45 eV, then increased to 1.68 eV as D ts  increased from 3.5 to 5 cm. The Hall-effect measurement system revealed that CdTe films prepared with a D ts  of 4 cm exhibited optimal electrical properties, and the resistivity, carrier mobility, and carrier concentration were determined to be 2.3 × 10⁵ Ω∙cm, 6.41 cm²∙V -1 ∙S -1 , and 4.22 × 10 12 cm -3 , respectively.

Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering