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The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of La x Al y O films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of La x Al y O films and the chemical bond composition of La x Al y O/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the La x Al y O film treated with SRPO were also enhanced.

Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment