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We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used sintered AZO targets with an Al₂O₃ content of 2.0 wt. %. The analysis of the data obtained by X-ray diffraction, Hall-effect, and optical measurements of AZO films at various power ratios showed that the complex orientation texture depending on the growth process enhanced the contribution of grain boundary scattering to carrier transport and of carrier sinks on net carrier concentration, resulting in the reduction in the Hall mobility of polycrystalline AZO films.

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Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering