English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A metal-insulator-metal structure resistive switching device based on H 0.5 Z 0.5 O₂ (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switching (RS) behaviors with an extremely high OFF/ON ratio over 5400. The retention property had no degradation at 6 × 10⁴ s. The current-voltage characteristics of the HZO samples showed a Schottky emission conduction in the high voltage region (V reset &lt; V &lt; V set ), while at the low voltage region (V &lt; V reset ), the ohmic contact and space charge limited conduction (SCLC) are suggested to be responsible for the low and high resistance states, respectively. Combined with the conductance mechanism, the RS behaviors are attributed to joule heating and redox reactions in the HZO thin film induced by the external electron injection.

Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio