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We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and mobility of 5 cm²/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 10⁵ at a gate bias of -5 V under 290 nm illumination.

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering