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NOx is emitted in the flue gas from semiconductor manufacturing plants as a byproduct of combustion for abatement of perfluorinated compounds. In order to treat NOx emission, a combined process consisting of a dry plasma process using nonthermal plasma and a wet chemical process using a wet scrubber is performed. For the dry plasma process, a dielectric barrier discharge plasma is applied using a blade-barrier electrode. Two oxidation methods, direct and indirect, are compared in terms of NO oxidation efficiency. For the wet chemical process, sodium sulfide (Na2S) is used as a reducing agent for the NO2. Experiments are conducted by varying the gas flow rate and input power to the plasma reactor, using NO diluted in air to a level of 300 ppm to simulate exhaust gas from semiconductor manufacturing. At flow rates of ≤5 L/min, the indirect oxidation method verified greater removal efficiency than the direct oxidation method, achieving a maximum NO conversion rate of 98% and a NOx removal rate of 83% at 29.4 kV and a flow rate of 3 L/min. These results demonstrate that the proposed combined process consisting of a dry plasma process and wet chemical process is promising for treating NOx emissions from the semiconductor manufacturing industry.

Plasma–Chemical Hybrid NOx Removal in Flue Gas from Semiconductor Manufacturing Industries Using a Blade-Dielectric Barrier-Type Plasma Reactor