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The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal–Oxide–Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.

Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications