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Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by using the finite element method, followed by the derivation of a compact circuit model and extraction of equivalent parameters. We show examples of CNTFET simulations and extract from them the fitting parameters of the model. The aim is to achieve a fully functional description in Verilog-A language and create a model library for the SPICE-like simulator environment, in order to be used by IC designers.

A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors