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Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. Capacitance-voltage (CV) characteristics are observed for the Ag/Al2O3/TiN devices, suggesting the unipolar/bipolar resistive switching phenomena. Negative capacitance (NC) at low frequency proves inductive behavior of the CBRAM devices due to Ag ion migration into the Al2O3 oxide-electrolyte. Thicker Al2O3 film shows diode-like threshold switching behavior with long consecutive 10,000 cycles. It has been found that a thinner Al2O3 device has a larger on/off ratio of &gt;108 as compared to a thicker one. Program/erase (P/E) cycles, read endurance, and data retention of the thinner Al2O3 oxide-electrolyte shows superior phenomena than the thicker electrolyte. The switching mechanism is also explored.

Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM