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In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage.

Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor