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This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for a wideband system. Through well-designed parameter values of the feedback and the matching structure of the circuit, a relatively flat frequency response was obtained over a wide frequency band. Simultaneously, in order to reduce the fluctuation of current caused by the environmental temperature, a bias circuit with quiescent current temperature compensation was designed. The driver power amplifier, which was implemented in the form of a monolithic microwave integrated circuit (MMIC), was designed to drive a broadband high-power amplifier. The designed broadband driver amplifier for the 6 GHz to 20 GHz frequency band had a very small die size of 1.5 × 1.2 mm2 due to the use of an optimized impedance matching structure. It exhibited a small-signal gain of 12.5 dB and output power of 26 dBm. The flatness of this driver amplifier for gain and output power was achieved as ±2.5 dB and ±1 dB over the entire frequency band, respectively. The experimental results showed up to 35 dBm in the OIP3, and the current variation range was ±5 mA after using the temperature compensation bias circuit.

Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique