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Low-frequency 1/f voltage noise has been employed to probe stochastic chargedynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibitingboth resistive switching (RS) and magneto-resistive (MR) effects. A1/f$^{\gamma}$ noise power spectral density is observed in a wide range ofapplied voltage biases. By analyzing the experimental data within the frameworkof Hooge's empirical relation, we found that the Hooge's parameter $\alpha$ andthe exponent $\gamma$ exhibit a distinct variation upon the resistancetransition from the low resistance state (LRS) to the high resistance state(HRS), providing strong evidence that the electron trapping/de-trappingprocess, along with the electric field-driven oxygen vacancy migration in theAlO$_x$ barrier, plays an essential role in the charge transport dynamics ofAlO$_x$-based RS memory devices.

Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO$_{x}$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses