English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator (FD-SOI) complementary metal-oxide–semiconductor (CMOS) process with eight metal layers back-end-of-line (BEOL) option. VCOs architecture is based on an LC-tank with p-type metal-oxide–semiconductor (PMOS) cross-coupled transistors. VCOs exhibit a tuning range (TR) of 3.5 GHz by exploiting two continuous frequency tuning bands selectable via a single control bit. The measured phase noise (PN) at 38 GHz carrier frequency is −94.3 and −118 dBc/Hz at 1 and 10 MHz frequency offset, respectively. The high-frequency dividers, from 40 to 5 GHz, are made using three static CMOS current-mode logic (CML) Master-Slave D-type Flip-Flop stages. The whole divider factor is 2048. A CMOS toggle flip-flop architecture working at 5 GHz was adopted for low frequency dividers. The power dissipation of the VCO core and frequency divider chain are 18 and 27.8 mW from 1.8 and 1 V supply voltages, respectively. Circuit functionality and performance were proved at three junction temperatures (i.e., −40, 25, and 125 °C) using a thermal chamber.

40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors