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Silicon is the dominant semiconductor in many semiconductor deviceapplications for a variety of reasons, including both performance and cost.III-V materials have improved performance compared to silicon, but currentlythey are relegated to applications in high-value or niche markets due to theabsence of a low-cost, high-quality production technique. Here we present anadvance in III-V materials synthesis using hydride vapor phase epitaxy that hasthe potential to lower III-V semiconductor deposition costs by orders ofmagnitude while maintaining the requisite optoelectronic material quality thatenables III-V-based technologies to outperform Si. We demonstrate the impactsof this advance by addressing the use of III-Vs in terrestrial photovoltaics, ahighly cost-constrained market. The emergence of a low-cost III-V depositiontechnique will enable III-V electronic and opto-electronic devices, with allthe benefits that they bring, to permeate throughout modern society.

Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy