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The passivation effects of the SF6 plasma on a GaAs surface has been investigated by using the radio frequency (RF) plasma method. The RF’s power, chamber pressure, and plasma treatment time are optimized by photoluminescence (PL), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The PL intensity of passivated GaAs samples is about 1.8 times higher than those which are untreated. The oxide traps and As-As dimers can be removed effectively by using SF6 plasma treatment, and Ga-F can form on the surface of GaAs. It has also been found that the stability of the passivated GaAs surface can be enhanced by depositing SiO2 films onto the GaAs surface. These indicate that the passivation of GaAs surfaces can be achieved by using SF6 plasma treatment.

Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation