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Graphene, known as an alternative for silicon, has significant potential in microelectronic applications. The assembly of graphene on well-defined metal electrodes is a critical step in the fabrication of microelectronic devices. Herein, we present a convenient, rapid, and large-scale assembly method for deposition of Ag electrodes, namely optically induced electrodeposition (OIED). This technique enables us to achieve custom-designed and mask-free fabrication of graphene transistors. The entire assembly process can be completed within a few tens of seconds. Our results show that graphene-based transistors fabricated with Ag electrodes function as a p-type semiconductor. Transfer curves of different samples reveal similar trends of slightly p-type characteristics, which shows that this method is reliable and repeatable.

Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition