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In this work, we report the electrical properties of cytochrome C (Cyt C) inside porous silicon (PSi). We first used two techniques of protein infiltration: classic sitting drop and electrochemical migration methods. The electrochemically assisted cell, used for the infiltration by electro-migration, improved the Cyt C nucleation and the crystallization behavior due to the PSi. We were able to carry out the crystallization thanks to the previous infiltration of proteins inside the Si pores network. We then continued the protein crystal growth through a vapor diffusion set-up. Secondly, we applied both forward and reverse bias currents only to the infiltrated Cyt C. Finally, the electrical characteristics were compared to the control (the protein molecules of which were not infiltrated) and to the samples without protein infiltration. The linker used in the sitting drop method influenced the electrical properties, which showed a modification in the current density. The simple drop method showed a current density of ~42 A/cm2; when employing the electrochemical cell technique, the current density was ~318 A/cm2; for the crystallized structures, it was ~0.908 A/cm2.

crystals

Electro-Infiltration of Cytochrome C into a Porous Silicon Network, and Its Effect on Nucleation and Protein Crystallization—Studies of the Electrical Properties of Porous Silicon Layer-Protein Systems for Applications in Electron-Transfer Biomolecular Devices