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In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers