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Diamonds are thought to be excellent candidates of next-generation semiconductor materials for high power and high frequency devices. A two-dimensional hole gas in a hydrogen-terminated diamond shows promising properties for microwave power devices. However, high sheet resistance and low carrier mobility are still limiting factors for the performance improvement of hydrogen-terminated diamond field effect transistors. In this work, the carrier scattering mechanisms of a two-dimensional hole gas in a hydrogen-terminated diamond are studied. Surface roughness scattering and ionic impurity scattering are found to be the dominant scattering sources. Impurity scattering enhancement was found for the samples after a high-temperature Al2O3 deposition process. This work gives some insight into the carrier transport of hydrogen-terminated diamonds and should be helpful for the development of diamond field effect transistors.

Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer