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To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highly reflective distributed Bragg reflectors (DBRs) are a requirement. In this report, AlN and Al1−xInxN layers were first sputtered and characterized concerning their optical, structural and morphological properties. Ellipsometry measurements were used to determine the optical constants (refractive index, n and coefficient of extinction, k, in dependence of the wavelengths of the layers. The indium content of the Al1−xInxN film was investigated by X-ray photoelectron spectroscopy analysis. Subsequently, AlN/Al1−xInxN DBRs with high reflectivity spectra operating in the UV A, B and C were designed and fabricated on Si (111) and SiO2 substrates by radio frequency (RF) magnetron sputtering. The DBRs consist of an eight-pair AlN/Al0.84In0.16N at 235 nm, 290 nm and 365 nm with reflectances of 86.5%, 97.7% and 97.5% with FWHM of 45 nm, 70 nm and 96 nm, respectively. Atomic force microscopy analysis yielded a Root Mean Square (RMS) of 2.95 nm, implying that the DBR samples can achieve reasonable smoothness over a wide area. Furthermore, the impact of an annealing phase, which is frequently required during device growth, was investigated. Our findings indicate that AlN and Al1−xInxN are suitable materials for the fabrication of deep UV DBRs.

High Reflectivity AlN/Al1−xInxN Distributed Bragg Reflectors across the UV Regions by Sputtering