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The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D3h symmetric excitons. The lowest FSS obtained is 3.9 μeV with the lowest energy X state (LX) anticlockwise rotate from [1–10] (i.e., zero FSS will be crossed in a proper field). The lateral field projection induces a large eh separation and various FSS, LX, and emission intensity polarization. The lateral field along [1–10] breaks the X1–X2 wavefunction degeneracy for independent HH and VV cascade emissions with robust polarization correlation. With FSS ~4 μeV and T1 ~0.3 ns fastened in a distributed Bragg reflector cavity, polarization-resolved XX–X cross-correlations show fidelity ~0.55 to a maximal entangled state |HH&gt; + |VV&gt;. A higher fidelity and zero FSS will be obtained in the hybrid QD structure with a junction field integrated to tune the FSS and a sub-bandgap excitation to avoid influences from electrons in the barrier.

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement