English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700–800 °C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370–375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11–4.71 eV) has a higher band gap compared to the ZnO crystal (3.271–4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 °C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity.

crystals

Influence of Calcination Temperature on Crystal Growth and Optical Characteristics of Eu3+ Doped ZnO/Zn2SiO4 Composites Fabricated via Simple Thermal Treatment Method