English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.

A Comparison Study on Multilayered Barrier Oxide Structure in Charge Trap Flash for Synaptic Operation